Fig. 3From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronicsa Work function modification for various electrical phases of HfO2-x. The inset shows histograms of CPD maps. b Schematics of different work functions with different CPDs in the conducting and insulating states (denoted by c and i, respectively). Band diagrams of Pt/HfO2-x/Ag structure of c before and d after contactBack to article page