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Nano Convergence
Fig. 4 | Nano Convergence

Fig. 4

From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

Fig. 4

CPD and current mapping corresponding topography for a HfO2-x thin film. a Simultaneously obtained topography (left) and current mapping images (right) for the conducting states. The blue and red dotted circles represent intergrain and grain boundaries, respectively. b Local I-V data for the intergrain (blue) and grain boundaries (red). The inset shows a schematic of the cAFM setup used for characterizing HfO2-x thin films. c Topography (top) and CPD mapping image (bottom) and d topography (top) and current mapping image (bottom) at the same position for the conducting states. Line profiles of e topography and CPD mapping images and f topography and current mapping images along the red lines in (c) and (d)

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