Fig. 6From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronicsGrain boundary passivation effect through balancing feedback of hole barrier modulation. a Work function modification under various strains in HfO2-x. The inset shows histograms of CPD maps. Variation of b the CPD depth (black) and grain boundary depth (red), c the net doping density, Pnet, and d the CPD depth (black) and defect density (red) at the grain boundary as a function of the strainBack to article page