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Fig. 7 | Nano Convergence

Fig. 7

From: Grain boundary passivation via balancing feedback of hole barrier modulation in HfO2-x for nanoscale flexible electronics

Fig. 7

Band structure differences between a a planar and b a bent HfO2-x thin film. The space charge distribution (top) represents a thermal equilibrium state between the trapped hole density at the grain boundary (orange) and the negatively charged acceptor density (green) in a cross section across grain boundaries in the in-plane direction. The insets in a and b show a planar and a bent HfO2-x thin film, respectively. In the three-dimensionally expressed band diagrams (bottom), grain boundaries are marked by yellow lines, and the blue and orange lines on the grain boundaries indicate electron-filled and trapped hole states, respectively. In particular, the contact planes between HfO2-x and silver of the band diagram are depicted with the color of silver

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