Fig. 2From: Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics(a) Calculated free energy of bulk HfO2 at finite temperature with reference to the m-phase. Phase order diagrams based on free energies of m, t, f-phases of (b) undoped HfO2, (c) 3.125 f.u. % Si doped HfO2, and (d) 6.25 f.u. % Si doped HfO2Back to article page