Fig. 4From: Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics(a) Measured P–V curves of the HZO capacitors with HZO thicknesses of 6.5 nm, 8.4 nm, and 12.0 nm at 1 kHz, (b) measured normalized polarization curves versus pulse width tpw as a function of applied electric field EFE. for the 8.4 nm-thick HZO capacitorBack to article page