Fig. 5From: Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristicsMeasured contour plots of normalized switching polarizations as a function of tpw and EFE for program operation with (a) 12.0Â nm, (b) 8.4Â nm, and (c) 6.5Â nm-thick HZO capacitors, and for erase operation with (d) 12.0Â nm, (e) 8.4Â nm, and (f) 6.5Â nm-thick HZO capacitorsBack to article page