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Fig. 7 | Nano Convergence

Fig. 7

From: Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristics

Fig. 7

Cross-sectional bright-field TEM images and f-phase grain maps for the (a, b) 12.0 nm, (c, d) 8.4 nm, (e, f) 6.5 nm-thick HZO capacitors. Inverse pole maps of orthorhombic grains for the (g) 12.0 nm, (h) 8.4 nm, (i) 6.5 nm-thick HZO capacitors with respect to the (001) orientation. The color represents the population of the orientations (red: highest, green: medium, blue: lowest)

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