Fig. 7From: Mesoscopic-scale grain formation in HfO2-based ferroelectric thin films and its impact on electrical characteristicsCross-sectional bright-field TEM images and f-phase grain maps for the (a, b) 12.0Â nm, (c, d) 8.4Â nm, (e, f) 6.5Â nm-thick HZO capacitors. Inverse pole maps of orthorhombic grains for the (g) 12.0Â nm, (h) 8.4Â nm, (i) 6.5Â nm-thick HZO capacitors with respect to the (001) orientation. The color represents the population of the orientations (red: highest, green: medium, blue: lowest)Back to article page