Fig. 4From: Near-field infrared nanoscopic study of EUV- and e-beam-exposed hydrogen silsesquioxane photoresist(Top) s-SNOM results of the pre-development chemical pattern visualization of latent images with the 1125 cm−1 infrared laser. The red color indicates higher infrared absorption. (bottom) Post-development pattern inspection of atomic force microscope (AFM) for half-pitch (HP) 100, 200, 300, and 500 nm patterns. The scale bar is 2 μmBack to article page