Fig. 6

Remote epitaxy of 2D materials on III-N substrates and penetration distance of the potential fluctuations. Si/1-monolayer (ML)-graphene (Gr)/Si for a1 and b1, GaAs/1-ML-Gr/GaAs for a2 and b2, GaAs/2-ML-Gr/GaAs for a3 and b3, GaN/2-ML-Gr/GaN for a4 and b4, GaN/3-ML-Gr/GaN for a5 and b5, LiF/3-ML-Gr/LiF for a6 and b6. a EBSD of released surfaces. b Scanning electron microscopy morphology of as-grown surfaces. c Comparison of the effective potential energy fluctuation on 1-ML, 2-ML, and 3-ML graphene coated substrates. d The schematic of the remote interaction penetration depth depending on iconicity across groups IV, III-V and I-VII materials show that graphene transparency increases with material iconicity. e Potential energy fluctuation from the GaN substrate through 1-ML graphene and h-BN. Figure reproduced from ref. [13], Springer Nature Ltd