Fig. 9
Plan-view SEM image of GaN growth on graphene/SiO2/Si substrate. a with NH3 annealing b without NH3 annealing. Figure reproduced from ref. [217], Wiley. c cross-sectional HAADF-STEM image of GaN on N-plasma treated graphene/SiC substrate. FFT pattern of AlN layer grown on d graphene regime, e etched graphene regime. Figure reproduced from ref. [218], Springer Nature Ltd. f atomic resolution HAADF-STEM image of graphene layer after N ion implantation showing N-atom adjacent to a vacancy and a substitutional N-atom. Figure reproduced from ref. [219], ACS Publications. g Demonstration that carbon loss of graphene is proportional to N coverage. Figure reproduced from ref. [220], ACS Publications