Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review

Nano Convergence

Table 1 Various synthesis and transfer methods of graphene

Material	Seed substrates	Synthesis method	Crystallinity	Thickness	Transfer method	References
Graphene	Graphite	Mechanical exfoliation	Single crystal	Variable	Sticky tape	[21, 25,26,27]
	Graphite oxide	Chemical exfoliation	Single crystal	Variable	–	[28,29,30,31]
	Cu foil	CVD	polycrystal	Multiple layer	Wet etching	[34,35,36,37,38,39]
			Single crystal	Single layer	Wet etching	[40]
			Single crystal	Single- to bilayer	Wet etching	[41]
	Ni foil	CVD	Variable	Bilayer	Wet etching	[42,43,44]
		CVD	Single crystal	Single- to few-layer	Wet etching	[45]
		DAS	Variable	Multiple layer	Wet etching	[51, 52]
	Pd	CVD	Single crystal	Monolayer	–	[46]
	Ir	CVD	Single crystal	Monolayer	–	[47]
	Cu-Ni alloy foil	CVD	Single crystal	Monolayer	Wet etching	[49]
	Cu-Ni alloy foil	CVD	Single crystal	Bilayer Tri-layer	Wet etching	[50]
	Ge	CVD	Single crystal	Variable	Dry transfer	[56]
				Monolayer	–	[57]
				Monolayer	–	[58]
	c-plane sapphire	CVD	Single crystal	Monolayer	Wet etching	[60]
	SiC	CVD	Single crystal	Monolayer	Ni stressor	[61, 62]
			Single crystal	Monolayer	–	[63, 64]
			Single crystal	Multilayer	–	[65]
		MBE	Single crystal	Monolayer	–	[66, 67]
		MBE	Single crystal	Variable	–	[67,68,69]