Fig. 1

a. Schematic illustration explaining the principle of the exfoliation of β-Ga₂O₃ from the graphene on SiC and photograph of the exfoliated β-Ga₂O₃ nanomembrane; the inset indicates a flip of 180° for the nanomembrane [34], b. Photograph image of flexible GaN film transferred from graphene/sapphire substrate [35], c. Schematic of various vdW oxide heteroepitaxy of ZnO, MoO₂, CoFe₂O₄, Fe₃O₄, PbZrTiO₃, VO₂ [22, 36,37,38,39,40,41], d. Schematic views of remote epitaxy of III-V on graphene/III-V substrate and exfoliation of grown III-V layer, e. Photographs of single-crystalline GaAs(001) exfoliated from graphene GaAs(001) substrate [42], f. Schematic illustration depicting fabrication procedures for flexible GaN-LED array encapsulated with polyimide filler, g. Photograph of polyimide encapsulated GaN-LED exfoliated from substrate [43], h. Schematics depicting the exfoliation of the heteroepitaxial ZnO microrods process using the thermal release tape technique, and corresponding result sample photographs of ZnO microrods coated by PI [44]