Fig. 3
From: Applications of remote epitaxy and van der Waals epitaxy
a. Schematic views of process sequence for the transfer of an AlGaN/GaN HEMT from a sapphire substrate to a copper plate, b. Id-Vds characteristics of AlGaN/GaN HEMTs before release from sapphire (blue line) and after transfer to a copper plate (red line), c. temperature map of the samples, taken with IR camera Neo Therno 700 (up-left and -right show the off state of the unreleased and transferred devices, respectively, down-left and -right show the on state oof the unreleased and transferred devices, respectively) [15], d. the flexibility of MoO2/muscovite sample(left) and removal of MoO2 film from muscovite substrate, e. carrier concentration of MoO2 films do not show any obvious temperature dependence, f. mobility in the MoO2 films do not show any obvious temperature dependence [22], g. Chip-less wireless e-skin based on surface acoustic wave (SAW) devices made of GaN freestanding membranes, h. Calculated electromechanical coupling coefficient (K2) of GaN SAW devices by the function of GaN thickness [74], i. The device structure of CFO/PMN-PT magnetoelectric coupling device. In the case of clamped device, the substrate and the bottom electrode are STO and SRO, respectively. In the case of the freestanding device, the substrate and the bottom electrode are PDMS and Ti, respectively, j. The voltage generated across the PMN-PT film in response to the magnetic field input [75], k. Schematic illustration of the BTO film growth, exfoliation, and transfer process onto a flexible PI substrate, l. Illustration of the experimental configuration of the c-AFM test, m. I-V curve of the Pt/BTO junction, n. Evolution of the current as a function of loading force, o. COMSOL FEM calculation with a tip-force model of the BTO film under applied force 28nN(up) and 196nN(down). The colors of blue to red correspond to lower to higher strain values [77]