Fig. 4
From: Applications of remote epitaxy and van der Waals epitaxy
a. Light output power curve of violet LED which was grown by the vdW epitaxy [80], b. EL spectra of the vdW epitaxial DUV-LED [72], c. Optical image of flexible solar-blind photodetectors using β-Ga2O3 epilayer [34], d. UV light on/off cyclic tests of flexible Ga2O3 photodetector [81], e. I-Vds characteristics of WS2 epilayer-based photodetector according to Vgs [82], f. Fabrication procedure of GaN microrod/micropyramid arrays by using the vdW epitaxy [83], g. Cross-sectional high-resolution TEM image and SAED patterns of AlN thin-film grown on the graphene/NPSS [30], h. Cross-sectional SEM image and red light-emitting images of the remote epitaxial AlGaAs LED [90], i. Schematic image of DUV-LED on the h-BN/sapphire wafer. The inset image shows a magnified microscopic image of DUV-LED array, j. Normalized EL spectra of DUV-LED by various injection currents [91], k. Fabrication procedure of the remote epitaxial microrod LED array, l. Optical image of microcrystal-based LEDs emitting white light. The right inset displays a magnified photograph of microcrystal-based LEDs, composed of orange, yellow, green, blue, violet, and white-emitting nanocrystals, m. I-V characteristic of flexible microrod LED during 1000 bending cycles [101], n. Cross-sectional TEM image of the remote epitaxial perovskite thin-film on a polar NaCl wafer. The inset presents FFT patterns of the CPbBr3 film, o. Steady-state PL curve of the CsPbBr3 flakes on the NaCl wafer and the graphene/NaCl substrate. [102]