Table 1 Performance and characteristics of low bandgap PSCs based on Sn–Pb mixed perovskites

1st

20.04

50.00

–

First NIR PSCs report

[20]

1st

14.16

64.01

–

Found that the non-linear bandgap behavior in Sn and Pb mixed perovskites

[21]

1st

22.44

78

94% for 30 days

(30–40% RH^a in N₂, shelf lifetimes,

unencapsulated)

First use of PEDOT:PSS as HTL and p-i-n structure in Sn–Pb mixed low bandgap PSCs

[22]

1st

26.86

70.6

–

Development of a new manufacturing method combining FASnI₃ and MAPbI₃

[15]

1st

22.84

65

–

Using a new fullerene derivative as an electron transport layer

[23]

1st

26.7

71

85% for 50 min

(50 ± 5% RH ambient air,

MPP^b tracking, unencapsulated)

Improving the stability and performance of Sn–Pb mixed PSCs by mixing Cs and FA

[24]

1st

25.69

70

99% for 1 month

(In N₂,

shelf lifetimes,

unencapsulated)

Addition of ascorbic acid to suppress oxidation of Sn–Pb mixed perovskite

[25]

2nd

28.7

71.3

94% for 33 days

(Ambient air,

shelf lifetimes,

encapsulated)

Modifying the thickness of Sn–Pb mixed perovskite by controlling the precursor concentration

[53]

2nd

23.5

79

80% for 7 days

(20–25 ℃, 30–50% RH, shelf lifetimes, unencapsulated)

Addition of C₆₀ to the precursor to reduce pinholes in the perovskite thin film

[26]

2nd

26.53

78

–

Reduce trap state by adding [SnF₂(DMSO)]₂ complex instead of SnF₂

[27]

2nd

29

74.4

–

Addition of chloride to increase grain size, crystallinity, and carrier mobility

[28]

2nd

30.3

79.2

88% 100 h

(MPP tracking, encapsulated)

The defect reduction and carrier lifetime increase through the addition of GASCN

[16]

2nd

33.14

76

–

Reducing lattice strain and trap density by Cs ion incorporation

[29]

2nd

24.95

72

80% for 30 days

(In N₂, shelf lifetimes,

unencapsulated)

Improving crystallinity through recrystallization via MACl post-treatment

[59]

3rd

31.4

80.34

–

Suppression of oxidation of Sn²⁺ by addition of Sn metal

[17]

3rd

30.2

79

–

Increasing electron diffusion length by adding CdI₂

[30]

3rd

30.58

80.34

95% for 2 months

(In N₂, shelf lifetimes,

unencapsulated)

Suppression of oxidation of Sn²⁺ by addition of Sn powder

[31]

3rd

24.3

82.6

–

Improving charge extraction through GABr post-treatment

[32]

3rd

26.61

76

85% for 1000 h

(50–60% RH,

shelf lifetimes,

unencapsulated)

Reducing defects through the addition of GABr

[33]

3rd

31.6

80.08

80% for 30 h

(Dry air box,

 < 20% RH,

shelf lifetimes,

unencapsulated)

Suppression of oxidation of Sn²⁺ and defect passivation by FSA addition

[18]

3rd

32.5

71.8

92% for 120 min

(~ 25 ℃, MPP tracking)

Reduction of Sn_yPb_(1-y)I₂ aggregation by Cs substitution

[34]

3rd

31.4

75.2

90% for 1000 h

(~ 25 ℃ in N₂,

shelf lifetimes)

Reducing defects and improving crystallinity through the addition of IMBF₄

[35]

3rd

27.89

73.13

87% for 1080 h

(In N₂,shelf lifetimes,

unencapsulated)

Mitigating V_OC loss through the addition of PEAI

[36]

3rd

30.2

80.1

80% for 750 h

(45 ℃ in N₂,

MPP tracking,

encapsulated)

Improving crystallinity and reducing residual stress by adding SnCl₂·3FACl complex

[37]

4th

31.86

80

–

Reduction of surface defects through EDA treatment

[38]

4th

30.6

79.41

90% for 350 h

(Shelf lifetimes, encapsulated)

Photoelectrical and topological effects of SnF₂

[39]

4th

32.77

80

90% for 1026 h

(RT in N₂,

constant 1 sun)

Using 2PACz/MPA bilayer as new hole transport layer

[19]

4th

32.5

82

80% for 200 h

(In N₂, MPP tracking,

unencapsulated)

Reduction of interfacial defects by adding GlyHCl and surface treatment with EDAI₂

[40]

4th

30.73

78.7

82% for 1830 h

(30–35 ℃ in N₂,

MPP tracking,

unencapsulated)

Defect passivation and faster charge extraction by adding PEAI and GASCN

[44]