Fig. 11

PVK SCTFs for photodetector devices. a Schematic of the device architecture (left) and the mechanism of operation of a narrow-band photodetector (right). b Normalized EQE spectra of MAPbBr₃ SCTF photodetectors with different thicknesses under a bias of − 1 V. c EQE spectra of 0.4 mm-thick device under various biases. Reproduced with permission from Ref. [101]. Copyright 2017, Wiley-VCH. d Optical image (left) and cross-sectional SEM image (right) of the MAPbBr₃ SCTF. e I–V curves of a photodetector under dark and 250 nW illumination conditions. f Gain and responsivity of the MAPbBr₃ SCTF photodetector. Reproduced with permission from Ref. [50]. Copyright 2018, Wiley-VCH. g Schematic of the device architecture of the Si(111)–Cs₃Bi₂I₉ SCTF photodetector. h Optical image of the device. i Comparison of self-powered performances of different photodetectors. j Rise and decay times estimated using the photoresponse to 355 nm laser pulse at 3 V bias. Inset shows the enlarged curve. Reproduced with permission from Ref. [103]. Copyright 2021, Wiley-VCH. k Photograph of the flexible photodetector. Inset shows a micrograph of the device (scale bar is 100 μm). l False-color SEM image of the device (scale bar is 3 μm). m I−V curves of the device as a function of the bending radius. n I−t curves of the device exposed to pulsed light illumination before and after bending at a bias of 2 V. Reproduced with permission from Ref. [106]. Copyright 2020, American Chemical Society