Fig. 3
From: Enhanced thermoelectric performance of SnSe by controlled vacancy population
Relation between PF and the electron band structure. a, b ARPES intensity maps taken along the Γ-Y direction of SnSe with a crystal growth cooling rate of 1 K/h (a) and 5 K/h (b). ΔE is the energy relative to the VBM of the 0.5 K/h sample. c, d A calculated electron band structure along the Γ-Y-Γ direction using the KKR-CPA method for Sn1-xSe with x = 0.04 (c) and x = 0.01 (d). e Doping dependence of the VBM obtained by calculations. f Crystal growth cooling rate dependence of ΔE–EVBM (closed circles) and PF (open circles) extracted from the ARPES data and previous transport results [22], respectively