Fig. 4From: Vertical nanoscale strain-induced electronic localization in epitaxial La2/3Sr1/3MnO3 films with ZrO2 nanopillar inclusionsTemperature dependence of resistivity under various magnetic fields applied parallel to the thin film plane for LSMO with x = 0 (a) 0.2 (b) and 0.3 (c) respectively. All the data were corrected for the magnetoresistance effectBack to article page