Fig. 5From: Vertical nanoscale strain-induced electronic localization in epitaxial La2/3Sr1/3MnO3 films with ZrO2 nanopillar inclusionsa, b: Logarithmic temperature dependence of conductivity under various applied magnetic fields parallel to the thin film plane for LSMO with x = 0.2 and 0.3, respectively. c, d: Localization fitting to logarithmic temperature dependence of the \(\sigma_{{{\text{0T}}}}\) corresponding to fittings to Eq. (1–3D) and Eq. (1–2D) for x = 0.2 and 0.3 thin films, respectively. The fitting parameters are displayed in the inset of the figuresBack to article page