Fig. 1
Types of Epitaxy. Conventional thin film heteroepitaxy with strained or domain matching lattice relationship. a Fully relaxed SrTiO3(STO) thin film epitaxy on SrRuO3(SRO) buffered STO substrate. b Domain Wall interface and its displacement vector map of BiFeO3 grown on STO substrate. c ZnO doped HfO2 (HZO) on La0.7Sr0.3MnO3(LSMO) domain matching epitaxy with a 9:10 matching relationship. d Catalyst-free nano-epitaxy of semiconductor NWs using metal–organic chemical vapor deposition (MOCVD) and plasma-assisted molecular beam epitaxy (PA-MBE). SEM tilted view of InGaAs NW arrays on patterned substrates (left) and cross-sectional SEM image of InGaN NWs grown by on (001) Si (right). e Heteroepitaxy composed of purely 2D layered materials. f MoS2/WSe2 heterostructures with increase of W/Se composition ratio (left to right) and its HRSTEM micrograph at the WS2/WSe2 heterointerface. g Raw HAADF-STEM image and and false color viewed HAADF-STEM iamge of monolayer MoS2 grown on nanoporous gold substrate from the [98]Au. h HRSTEM micrographs and atomic line profile of remote epitaxial GaAs/monolayer graphene/GaAs heterointerface