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Nano Convergence
Fig. 2 | Nano Convergence

Fig. 2

From: Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Fig. 2

vdW epitaxy of InAs NWs on graphene. a Adsorption energy and equilibrium distance of indium and arsenic adatom on graphene. b Possible adatom sites on graphene, noted with H, T, and B, standing for hollow, top, and bridge, respectively. c Top-view SEM image of InAs NWs grown on suspended graphene. d The ball-and-stick model for vdW InAs/graphene epitaxial structure. e HRTEM image of the cross-sectioned InAs/graphene. f vdW binding energy of InAs on graphene, plotted as a function of vdW gap, simulated by first-principles calculation

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