Fig. 3From: Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substratesSurface interactions. DFT calculations of potential interactions at graphene/SiO2 (crystalline, O-terminated) substrate interface for three cases: monolayer graphene, bilayer graphene, monolayer graphene on H-passivated SiO2 substrate in the red box. a atomic models, b charge density plots, c band structures. Graphene/Si (001) substrate interface in the blue box. d STM images before and after H-depassivation. e Atomic models and charge density distribution of graphene on Si with H-passivated and H-depassivated Si surface. f Experimental and simulated tunneling dI/dV versus sample bias, respectivelyBack to article page