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Nano Convergence
Fig. 5 | Nano Convergence

Fig. 5

From: Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

Fig. 5

Remote epiaxy through lattice transparent vdWs layer. Remote homoepitaxy of GaAs/graphene/GaAs in the red box. a DFT calculated average electron density along the GaAs slabs for As-Ga interaction and As-As interaction, respectively. Significant charge density exists inside the separated gap of about 9 Å. b STEM micrographs at the GaAs/graphene/GaAs heterostructure interface with a sharp interface with thickness of 5 Å. Remote homoepitaxy of ZnO nanorods/graphene/ZnO film in the blue box. c SEM tilted view of the ZnO nanorods grown on graphene/ZnO substrate and its HRTEM image across the interface with predicted atomic structure. d Atomic structure and charge density difference of remote homoepitaxial c-ZnO/MLG/c-ZnO and c-ZnO/BLG/c-ZnO heterointerfaces

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