Fig. 3
From: Lattice modulation strategies for 2D material assisted epitaxial growth
Lattice modulation mechanism in graphene-assisted nitrides remote epitaxy. a CDD of Ga/single-layer graphene, Ga/single-layer graphene/sapphire, and Ga/single-layer graphene/AlN at the H site. b PDOS of Ga/single-layer graphene, Ga/single-layer graphene/sapphire, and Ga/single-layer graphene/AlN at the H site [72]. c Atomic structure of sapphire/graphene/GaN interface and calculated planar average electric field of sapphire with various graphene layers. [73] Copyright from the American Chemical Society and Wiley‐VCH GmbH