Fig. 5

Lattice modulation mechanism in nitrides vdW epitaxy. a Calculated models and (b) Formation energy of different graphene/nitrides heterointerface configurations. c–d The grain boundary between grains with a specific rotation angle. e HRTEM and corresponding fast Fourier transform (FFT) images from each grain. f, g HRTEM images and structural representations of the Moiré patterns for the overlap of two GaN layers with relative rotations. Scale bars, 5 nm (c and d) and 2 nm (e to g) [85]. Copyright from American Association for the Advancement of Science. h The formation energy of three representative structures with N or Ga procedures on the WS₂ surface. i Atomic model structures and CDD isosurfaces at the nitrides/WS₂ heterointerface. j GaN epilayer after exfoliation. k XRD-ϕ scan of GaN (10 \(\overline{1 }\) 3) direction. [94] Copyright from Wiley–VCH GmbH