From: Potential and perspectives of halide perovskites in light emitting devices
Material | Strategy | Luminance (cd/m2) | EQE (%) | References |
---|---|---|---|---|
FA0.7MA0.1GA0.2)0.87Cs0.13PbBr3 | On substrate nanocrystal synthesis | 470,000 | 28.9 | [141] |
FA1−xGAxPbBr3 | NC defect passivation | – | 23.4 | [100] |
MAPbBr3 | MOF stabilized | 120,000 | 15.9 | |
CsPb0.64Zn0.36I3 | B-site cation variation (Zn2+) | 2202 | 15.1 | [97] |
CsPbI3 | Inorganic ligand | – | 23 | [11] |
Cs1−xGAxPbI3 | A cite cation engineering | 3486 | 18.9 | [144] |
CsPb(Br/I)3 | In situ modification | 11,233 | 13.2 | [145] |
CsPbBr3:F | Fluoride post-synthesis treatment | 1946 | 16.9 | [146] |
CsPbI3 | Multidentate short ligand tetramethylthiuram disulfide (TMTD) process | 3861 | 20.65 | [147] |