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Correction: Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review
Nano Convergence volume 10, Article number: 49 (2023)
The Original Article was published on 28 April 2023
Correction to: Nano Convergence (2023) 10:19 https://doi.org/10.1186/s40580-023-00368-4
Following publication of the original article [1], the authors noticed some errors.
In Sect. 4.3, “In-situ 2D growth”, and in caption of Fig. 3, the compound name "h-BN" should be changed to "BN (Boron nitride)" and "graphene" to be changed to "thin amorphous carbon (TAC)". In consistent with the corrections in text and figure caption, Fig. 3 is also updated.
Multiplication of freestanding membranes via in situ growth a The schematic illustration of membrane production process via in situ growth. b Cross-sectional TEM image of remote epitaxially grown GaN on BN/GaN. c False-color cross-sectional, Plan-view SEM and EBSD map of as-grown and after exfoliated GaN. d Cross-sectional STEM image of remote epitaxially grown GaAs on TAC/AlGaAs/GaAs. e False-color cross-sectional, Plan-view SEM and EBSD map of as-grown and after exfoliated GaAs. Figure reproduced from ref. [173], Springer Nature Ltd
The original article [1] has been updated.
Reference
J. Ji, H.M. Kwak, J. Yu, S. Park, J.H. Park, H. Kim, S. Kim, S. Kim, D.S. Lee, H.S. Kum, Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review. Nano Converg 10, 19 (2023). https://doi.org/10.1186/s40580-023-00368-4
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Ji, J., Kwak, HM., Yu, J. et al. Correction: Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review. Nano Convergence 10, 49 (2023). https://doi.org/10.1186/s40580-023-00396-0
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DOI: https://doi.org/10.1186/s40580-023-00396-0