Fig. 11
From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Doping and interfacial engineering of HfO2-based RS devices. a Mg doping to modify Vo migration kinetics in HfO2. The multilevel I–V cycles with varying reset voltages of TiN/Mg:HfOx/Pt devices. b Improvement in performance of HfOx-based RS device using doping. c Enhanced switching characteristics for TiN/HfO2/Ti/HfO2/Pt/Ti stack RS devices, which use Ti as the interlayer. d Forming voltage distribution for PVD-TiN (left) devices and ALD-TiN (right) devices. e Structural modulation of HfO2 switching matrix as nanorod structures for exploiting the environment as the Vo reservoir. a reproduced with permission from [195]. b reproduced with permission from [199]. c reproduced with permission from [213]. d reproduced with permission from [215]. e reproduced with permission from [217]