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Nano Convergence
Fig. 12 | Nano Convergence

Fig. 12

From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Fig. 12

Comprehensive schematic of the ferroelectric and RS HfO2 memory device and the effect of Vo for their performances. a Ferroelectric switching mechanism based on the movement of oxygen atoms (up) and Vo-mediated RS mechanism (down). b Effects of Vo and their roles in ferroelectric and resistive memory performance. c Key parameters affecting the concentration and motion of Vo in the film

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