Fig. 3From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxideIntegrated differential phase contrast scanning transmission electron microscopy (iDPC-STEM) image of rhombohedral Hf0.5Zr0.5O2 film under a 0Â V (left), 4Â V (right). b Out-of-plane displacement of Vo under a positive voltage. Inset shows the in-plane and out-of-plane displacements. c High-angle annular dark-field scanning transmission electron microscopy image overlaid with O K line profile and EDS mapping of O K edges of oxygen-deficient channel on the HfO2 film. a, b reproduced with permission from [71]. c reproduced with permission from [75]Back to article page