Fig. 5
From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Total energies of the various crystal phases of HfO2 with different Vo concentrations of the a bulk and b interface region. c Energies of the orthorhombic Pca21 phase of HfO2 with different Vo states of charge and relaxation conditions relative to the monoclinic phase (ΔE) as a function of Vo concentration. Phase content of 10-nm HZO samples as a function of the d ozone dose time during the ALD process and e oxygen flow during the sputtering. The phase portions are extracted and calculated by the GIXRD pattern. f Polarization–electric field curves of the 10-nm samples vs. ozone dose time during ALD process. a, b reproduced with permission from [23]. c reproduced with permission from [94]. d, e reproduced with permission from [227]. f reproduced with permission from [37]