Fig. 6
From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
a Polarization–electric field and current–electric field curves of a HfO2 ferroelectric thin film for pristine, wake-up, and fatigue states. Evolution of the Preisach/switching density (ρ) of the HfO2 thin film after b ~ 1, c ~ 103, and d ~ 10.6 cycles corresponding to the pristine, wake-up, and fatigue states, respectively. e Evolution of the 2Pr, leakage current, defect concentration, and Ebias through repeated electric-field cycling. b-e reproduced with permission from [100]