Fig. 7
From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
a EDS depth profile, b Evolution of Pr and leakage current as functions of number of cycles for TiN/Hf0.5Zr0.5O2/TiN capacitors with and without NH3 plasma treatment. c Polarization–voltage curves. d Endurance test of Cu/VOx/Hf0.5Zr0.5O2/TiN capacitor with various sol–gel solutions concentration. e Transient currents during constant voltage stress. f Endurance test of TiN/Hf0.5Zr0.5O2/TiN capacitor annealed with 1- 2-step RTA processes. a, b reproduced with permission from [137]. c, d reproduced with permission from [138]. e, f reproduced with permission from [145]