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Nano Convergence
Fig. 9 | Nano Convergence

Fig. 9

From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide

Fig. 9

Low forming voltage exhibited on low-energy GBs in HfO2-based RS devices. a Forming process in annealed polycrystalline HfO2 at specific locations. b Typical bipolar RS behavior observed at the low voltage forming site (GB location). c Current map measurement in a write–read–erase–read cycle, which allows the locations to recover their insulating properties. a, b, c reproduced with permission from [184]. d, e reproduced with permission from [187]

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