Table 1 Comparison of properties of various metal oxides (potentially) utilized in semiconductor processes
From: Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide
Property | HfO2 | SiO2 | Al2O3 | ZrO2 | TiO2 |
|---|---|---|---|---|---|
Bandgap [eV] |  ~ 5.5 [229] |  ~ 9 [230] |  ~ 7 [231] | 5–7 [232] |  ~ 3.2 [233] |
Dielectric constant |  ~ 16 (Monoclinic)  ~ 29 (Cubic)  ~ 70 (Tetragonal) [234] | 3.9 [235] | 9 [235] |  ~ 20 (Monoclinic)  ~ 37 (Cubic)  ~ 47 (Tetragonal) [234] |  ~ 31 (Anatase)  ~ 114 (Rutile) [236] |
Formation enthalpy [kJ/mol] | –1,113.20 [140] | –320.7 [237] | –1,573 [238] | –1,097.46 [239] | –891.2 [238] |
M–O bond length [Å] | 2.2 [235] | 1.7 [235] | 1.9 [235] | 2.2 [235] | 2 [235] |
M–O bonding energy [kJ/mol] | 801 ± 13 | 799.6 ± 13.4 | 542 | 766.1 ± 10.6 | 672 ± 9 |