Fig. 2
Reproduced with permission from Ref. [87]. Copyright 2020, John Wiley and Sons
Experimental demonstrations of filament-free switching memristors. a–c A ion migration-based nonfilamentary memristor. A cross-sectional TEM image of the device structure (a), consecutive I-V switching curves (b), and schematic illustrations of the suggested switching mechanism (c). Reproduced with permission from Ref. [57]. Copyright 2022, Springer Nature. d–f A intercalation-based nonfilamentary memristor. Cross-sectional TEM and EDX images of the device structure (d), I-V switching curves with(out) LiPON (e), and plots of normalized conductance with(out) LiPON as functions of potentiating/depressing pulses (left) and potentiating/reading pulses (right) (f). Reproduced with permission from Ref. [72]. Copyright 2019, IEEE. g–i An electron trapping/detrapping-based nonfilamentary memristor. A cross-sectional TEM image of the device structure with the enlarged image (g), I-V switching curves under dark and light environments (h), and a band diagram (i).