Fig. 7From: Filament-free memristors for computingReproduced with permission from Ref. [93]. Copyright 2020, AIP PublishingSelectors. a A representative I-V curves for the electron trapping-based memristor showing threshold switching. b, c The area dependency of the current in ON (b) and OFF (c) states. d–f The pulse measurement for the switching evaluation and enlarged data during the switch on (e) and off (f). g I-V curves for one-selector one-resistor cell showing successful resistance switching hysteresis. Back to article page