Filament-free memristors for computing

Nano Convergence

Table 1 General trends of representative characteristics according to the presence of switching filament

Type	Switching region	Initial forming process	feedback effect	Area dependency	Speed	Retention	Uniformity	Yield	Operating current
Filament-free	Whole area (or bulk)	No required	No	Significant	Slow	Short	Good	High	Low
Filament	Nanoscale filament (channel)	Required	Heat	Insignificant	Fast	Long	Poor	Low	High

Note that these trends are always not applicable to all the memristors. For example, filament-free memristors based on intercalation (Sect. 2.2) typically shows a relatively long retention time