Table 2 A summary table of various filament-free switching memristors along with key parameters

Ion migration

Pt/anodized TiO_x/Ti

5 × 5–50 × 50

− 2.5 to 3

5 × 10⁶ pulses

4 × 10^–2

< 10

3.87%/1.39%

[57]

Pt/a-GaO_x/ITO

 ~ 1–30,000

− 2 to 2

–

–

< 10

–/Good

[56]

TiO_x/TiO_2−x/YSZ/TiO₂/Pt

–

− 1.5 to 1.5

3 × 10⁸ pulses

10⁷

< 3

–/Good

[58]

Au/MAPbI₃/ITO

500 × 500

− 1 to 1

–

< 10^–2

< 10

–/Good

[59]

Pt/TiO₂/TiO_2−x/Pt

0.05 × 0.05

− 2 to 2

–

NA

~ 10³

–/Good

[60]

Au/Nb:SrTiO₃

π × 150 × 150

− 6 to 3

10⁴

10⁴

> 10⁴

Good/Good

[61]

Pt/TaO_y/nanoporous TaO_x/Ta

π × 100 × 100

− 4 to 4

5 × 10³

1.2 × 10⁴

< 10²

< 59%/Good

[63]

Intercalation

Au/Li_xCoO₂/SiO_x/TiO₂/p⁺⁺-Si

300 × 300

− 5 to 5

> 2 × 10³

–

< 10

–/Good

[69]

Au/Li_xCoO₂/doped-Si

10 × 10–500 × 500

− 7 to 7

> 2 × 10²

> 3 × 10²

> 10³

–

[71]

Cr/LiCoO2/LiPON/a-Si/TiN

300 × 300

− 10 to 10

3 × 10³ pulses

> 10³

–

–

[72]

Planar device Li_1−xNbO₂ with Ti and Al contacts

–

− 10 to 10

–

> 2 × 10³

> 20

–/Good

[73]

Electron trapping /detrapping

Au/TiO₂ nanorod array/FTO

π × 750 × 750

− 4 to 2

–

< 2

> 10²

–

[83]

Au/WO₃/FTO

50 × 50

− 3 to 3

10³ pulses

10⁴

< 10

–/Good

[84]

Ti/HfO2/Pt

2 × 2–20 × 20

− 3 to 2

10³

10⁵

< 10²

Good/Good

[85]

Planar device Ba_0.7Sr_0.3TiO₃ with Pt contacts

–

− 90 to 90

–

2.5 × 10²

< 10

–

[86]

Au/O_D-IGZO/O_R-IGZO/Pt

π × 50 × 50

− 2 to 2

2 × 10³ pulses

10⁴

< 3

–/Good

[87]

Ag/Bi₂S₃ nano-network/FTO

π × 400 × 400

− 1 to 1

–

–

< 10

–

[88]

Pt/NbO_x/TiO_y/NbO_x/TiN

π × 0.015 × 0.015

− 10 to 10

5 × 10³

3 × 10³

> 10²

–/Good

[89]

Pt/Ta₂O₅/Nb₂O_5−x/Al₂O_3-y/Ti

5 × 5

− 10 to 10

10⁵

2 × 10⁵

> 8 × 10³

Good/Good

[90]

Ferroelectric polarization

W/Zr:HfO₂/SiO₂/doped Si

π × 20 × 20–π × 70 × 70

− 3 to 3

10³

10⁴

> 2 × 10²

Good/Good

[102]

Co/BaTiO₃/La_0.67Sr_0.33MnO₃/NdGaO₃

π × 0.175 × 0.175

− 5.6 to 4.2

–

–

3 × 10²

–

[103]

TiN/HfSiO₂/SiO₂/bottom electrode

0.15 × 0.15–0.5 × 0.5

− 4.4 to 4.4

–

–

> 3

Good/Good

[104]

Cr/CuInP₂S₆/Graphene

–

− 5.5 to 4.5

5 × 10³

> 2 × 10⁴

10⁶

–/Good

[105]

Ag/BaTiO₃/Nb:SrTiO₃

π × 20 × 20

− 3.4 to 3

10⁸

10⁴

 > 10²

–/Good

[106]

Ag/PbZr_0.52Ti_0.48O₃/ Nb:SrTiO₃

π × 50 × 50

− 3.8 to 4

10⁹

10⁴

 > 10²

–/2.06%

[107]

Mo/(Hf,Zr)O₂/TiON/TiN

20 × 20–100 × 100

− 2 to 2

10⁸

3 × 10⁴

 < 10

3.2%/3.6%

[108]

Ti/BaTiO₃/SrTiO₃/SrRuO₃

π × 0.25 × 0.25

− 8 to 8

2 × 10³

–

10⁴

–

[109]

Phase transition

Planar device Mos2 with Ti contacts

–

− 50 to 50

5 × 10³ pulses

–

< 3

–

[118]

Planar device Li_xMos₂ with Au contacts

–

− 6 to 6

4 × 10⁴ pulses

> 7 × 10³

< 10

–

[119]

Ti/Al₂O₃/MoTe₂/Au

0.36 × 0.39

− 3 to 3.5

–

10³

> 10⁵

–/Good

[120]

Ag/MoS₂/Ag

–

− 0.2 to 0.2

10³

–

10³

–/Good

[122]

Au/SrCoO_x/Nb:SrTiO₃

π × 100 × 100

− 5.5 to 1

7 × 10²

10⁴

> 10³

Good/Good

[123]

Au/SrCoO_x/SrRuO₃

4 × 4–100 × 100

− 3 to 3

10⁸

3 × 10³

> 10

Good/Good

[124]

Au/SrFeO_x/SrRuO₃

π × 50 × 50

− 4 to 4

6 × 10⁶

< 2

> 10

35%/22%

[125]

PT/α-MoO₃/SrCoO_2.5/Nb:SrTiO₃

π × 25 × 25

− 3 to 3

5 × 10⁴

> 10³

< 10

Good/Good

[126]

Filling-controlled Mott transition

Planar device NdNiO₃ with Pt contacts

–

− 8 to 8

3.6 × 10³ pulses

> 10³

< 10

Good/Good

[138]

Planar device NdNiO₃ or SmNiO₃ with Au and Pd contacts

–

− 8.1 to 8.1

10⁶

4 × 10⁴

10

–/Good

[139]

Pt/GdNiO_3−x/Nb:SrTiO₃

70 × 70

− 5 to 5

10⁴

> 3 × 10⁴

> 10³

Good/Good

[141]

W probe/La₂Ti₂O_7−x/TiN

–

− 2.5 to 2.5

10³

–

< 10

–/Good

[142]