Fig. 12

a–d Schematic of four types of epitaxial layer transfer e TEM image of In_0.53Ga_0.47As-on-insulator on a silicon substrate illustrates a highly uniform layer on Y₂O₃. The zoom in area shoes the excellent crystal quality with successful direct wafer bonding [70] f GaN LED chips is transferred successfully to Cu foil by laser lift-off process and integrated in an array [71] g High quality of Ge is observed after transfering by ion-cut process and CMP for reducing surface roughness [72] h thermal release tape was used for lift-off the stressed Ni layer on top of GaN, which provided the energy needed to break bondsat the boron nitride interface [73]