Fig. 2
From: Formation techniques for upper active channel in monolithic 3D integration: an overview
a Laser annealing process for the M3D structure b SEM images for the a-Si surface are annealed at various DUV laser power of 4, 6, 8, and 10 mW c the degradation of the bottom device after LA at 6 mW compared to without laser treatment [9] d Green laser annealing for double a-Si layer and e surface of single-layer poly-Si compared to f upper layer in the double poly-Si layer structure [10] g Formed polysilicon film by a single blue laser scan with various areas due to Gaussian profile of laser beam [11] h Hillocks appear on the edge of the grain boundary of the polysilicon after LA from the AFM result [12]