Fig. 4From: Formation techniques for upper active channel in monolithic 3D integration: an overviewa Metal-induced crystallization and metal-induced lateral crystallization process b a-Si crystallizes as poly-Si under the Al layer in the MIC process, at which the annealing temperature is 200 oC [30] c Poly-Si is lateral crystallized from the Ni deposited in the contact hole and annealed at 530 oC for 15 h to form the NILC poly-Si [31]Back to article page