Fig. 5From: Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computingCopyright 2019, IEEEElectrical characteristics of oxygen ion-based ECRAM. a Switching characteristics with 10 ns pulses. b Average change in conductance along with pulse with while maintaining the same Vprog = \(\pm\) 4 V. The conductance modulation shows logarithmic dependence. c Average change in conductance along with programming voltage with exponential dependence while keeping the sample pulse width. d Average change in conductance along with programming current while keeping the same pulse width which satisfies a linear relation. e Retention characteristics lasting more than 14 h after programming. f Projection for switching energy per unit conductance change. Oxygen ion-based ECRAM shows a similar trend to that of Li ion-based ECRAM. a–f Adapted with permission [56]. Back to article page