Fig. 6From: Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computingElectrical characteristics of proton-based ECRAM. a Switching characteristics with 5 ns pulses with 1000 states showing symmetric behavior. b Retention characteristics for ~ 100 s at different conductance levels. c 105 pulses endurance conducted over 30 h. d Device failure in accordance with pulse width. Increasing pulse width ultimately leads to H2 gas evolution at the channel/electrolyte interface, resulting in physical damage. a–d Reprinted with permission from AAAS [81]Back to article page