Fig. 7From: Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computingElectrical characteristics of copper ion-based ECAM. a Copper ions provided from the gate electrode are steadily driven by the number of gate voltage, resulting in analog channel current modulation [89]. b Limiting the number of injected Cu ions allows linear channel current with respect to pulse number, improving gate controllability [90]Back to article page