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Fig. 8 | Nano Convergence

Fig. 8

From: Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing

Fig. 8

Categorization of device engineering methods. a Re-structuring of the channel layer to control device conductance and switching range. Reproduced with permission [63]. Copyright 2021, IOP Publishing, Ltd. b Insertion of filter layer between the channel and electrolyte to stabilize ion accumulation and migration. Reproduced with permission [84]. Copyright 2021, John Wiley and Sons. c Vertical layout to minimize ion movement distance for fast switching and area efficiency. d Addition of a heater on the bottom of the device for utilizing the device across a range of temperatures. Reproduced with permission [65]. Copyright 2022, IEEE

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