Electrochemical random-access memory: recent advances in materials, devices, and systems towards neuromorphic computing

Nano Convergence

Table 2 Comparison of oxygen ion-based ECRAM for in-memory computing

Mobile ions	Channel	Electrolyte	Reservoir	Effective size	Min Write time (operation V)	Retention @RT	Max G Range	On/off ratio	Linearity	Multilevel	Endur	Ref
O	WO₃	HfO₂	Metal oxide	L: 4 μm W: 10 μm	10 ns (± 4 V)	> 14 h 5.4% drop	1.5–16 μS	10.67	–	1000	2 × 10⁷	[56]
O	Pr_0.7Ca_0.3MnO₃	HfO_x	GdO_x	L: 50 μm W: 20 μm	1 s (+ 3 V/-3.75 V)	100 s	5–200 nS	40	0.58/-0.86	100	3200	[57]
O	TiO₂	YSZ	TiO_2-x	L: 100 nm W: 100 nm	2 μs @ 160 ℃ (± 1.5 V)	10⁵ s	100–450 nS	4	–	125	3 × 10⁸	[61]
O	WO₃	YSZ	–	L: 5 μm W: 10 μm	10 ms (± 1 V)	10³ s	495–580 nS	1.17	1.6/0.25	100	1000	[60]
O	WO_3-x	HfO₂	MoO_y	L: 100 μm W: 100 μm	200 μs (+ 8 V/-6 V)	–	0.05–5.6 μS	112	-0.09/0.16	100	2000	[62]
O	WO₃	HfO_x	GdO_x	L: 10 μm W: 4 μm	0.5 s (± 0.5 V)	–	1 nS–679 nS	679	1.8/-0.3	100	1000	[63]
O	Pr_0.7Ca_0.3MnO₃	HfO_x	GdO_x	L: 20 μm W: 10 μm	100 ms (± 5 V)	10⁸ s	200 n–2.5 μS	12.5	1.1/-0.9	500	15 × 10³	[64]
O	WO_2.7	HfO_1.7	GdO_x	L: 20 μm W: 20 μm	0.5 s (+ 4 V/-3 V)	900 s	10–80 μS	8	1.3/-2.1	30	420	[65]
O	WO_2.7	ZrO_1.7	GdO_x	L: 50 μm W: 50 μm	100 ms (± 2 V)	1000 s	400 n—1μS	2.5	1.3/-1.4	500	1000	[66]
O	WO_3-x	HfO₂	MoO_y	L: 85 nm W: -	10 ms (+ V/-2.5 V)	-	100 n—mS	27,000	–	100	5 × 10⁴	[67]