Table 3 Comparison of proton-based ECRAM for in-memory computing
Mobile ions | Channel | Electrolyte | Reservoir | Effective size | Min Write time (operation V) | Retention @RT | Max Conductance Range | On/off ratio | Linearity | Multilevel | Endur | Refs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
H | PEDOT:PSS/PEI | Nafion | PEDOT:PSS | 10–3 mm2 | 6 ms (± 1 V) | 10 ms | 600 μS–2mS | 3.34 | 4.5/-3.6 | 500 | – | [71] |
H | α-MoO3 | EMIM-TFSI | – | L:—mm W:—mm | 1 ms (+ 2.5 V / -1.8 V) | – | 70–95 nS | 1.4 | – | 50 | – | [75] |
H | PEDOT:PSS | Nafion | PEDOT:PSS | L: 45 μm W: 125 μm | 50 μs (-0.95 V/ + 1.2 V) | – | 50 –100 nS | 2 | 3.1/-0.4 | 50 | 108 | [72] |
H | p(g2T-TT) | EMIM:TFSI PVDF-HFP | p(g2T-TT) | L: 45 μm W: 15 μm | 20 ns (± 1 V) |  > 5 min | 2–120 μS | 60 | 1.2/03 | 100 | 2.1 × 109 | [74] |
H | PEDOT:PSS | SiO2 + ionic liquid | PEDOT:PSS | L: 1 μm W: 1 μm | 100 ns (± 1 V) | – | 1–4 mS | 4 | 4.8/-1.7 | 100 | 109 | [82] |
H | NdNiO3 | Silica | – | L: 200 μm W: 200 μm | 5 s (+ 0.7 V/-1.0 V) | – | 300–400 μS | 1.3 | – | 40 | 224 | [83] |
H | WO3 | Nafion | Pd | L: 100 μm W: 500 μm | 5 ms (± 200 nA) | Stable in air | 0–350 μS | 107 | 0.5/0.1 | 1000 | 2 × 104 | [78] |
H | WO3 | hBN | Si | L: 5–100 μm W: 10 μm | 10 ms (± 1 V) | 1000 s | 8–11 μS | 1.4 | 0.9/0.9 | 64 | 105 | [84] |
H | (Mxene/TAPA)n | H2SO4-PVA | – | L: 1000 μm W: 20 μm | 200 ns (± 1 V) | 50 s | 0.2–0.85 mS | 4.25 | 0.65/-1.59 | 100 | 108 | [79] |
H | WO3 | PSG | Pd | L: 150 nm W: 50 nm | 5 ns (+ 10 V/-8.5 V) | 100 s | 11–230 nS | 20.5 | 0.7/0.1 | 1000 | 105 | [81] |