Fig. 2From: Scalability of Schottky barrier metal-oxide-semiconductor transistorsReprinted, with permission, from [10]Room—temperature I–V and C–V curves of ErSi1.7/p-Si diode. The extracted Schottky barrier height for hole is 0.69 and 0.83 V from I–V (Φ BP I–V) and C–V (Φ BP C–V) method, respectively. In a and b, n and N A denote ideality factor and doping concentration of substrate, respectively.Back to article page